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BUSINESS

NEPES, GLOBAL TOP-TIER PARTNER

IT Chemical for  Semiconductor  & Display 

We provide global leading companies with cutting-edge polymerized lithography materials
and functional wet chemicals that are applied to the manufacturing processes of semiconductor
and display devices to be adopted in smart phones, cars and other IT devices.

Organic Insulator

Product Name
NDP-series
Characteristics
It is designed to be cured at low temperature, so it has low shrinkage, low dielectric constant, high resolution, excellent thermal stability and chemical resistance.
Structure
NDP-series Image
unit NDP-series
Cure ≤ 200
Shrinkage % ≤ 1
Water Absorption % ≤ 1
DK (Dielectric Constant) 25 GHz < 3.0
DF (Dissipation factor) 25 GHz < 0.02
Line/Space Hole Line/Space
25㎛ 20㎛ 25㎛ 20㎛
THK
5㎛
CD/Taper/THK 25.5㎛ 20.3㎛ 76.4˚ 5.4㎛ 78.0˚ 5.5㎛
THK
10㎛
CD/Taper/THK 23.4㎛ 18.1㎛ 78.5˚ 10.2㎛ 82.6˚ 10.3㎛

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Developer for Organic Insulator

Product Name
NOD-01
Characteristics
A product with excellent low/high-temperature insulation film and process margin
After Dev.
(Top size)
NOD-01 NOD-01
20sec
X 3puddle
≥ 20um
open
≥ 15um
open
35sec
X 3puddle
≥ 20um
open
≥ 15um
open

Photoresist

Product Name
Nega PR
Characteristics
A product with excellent low/high-temperature insulation film and process margin

Nega PR : NNBP-103T, NUTP-264

NUTP-264 90um Octagonal Pattern 80um Octagonal Pattern 70um Octagonal Pattern 60um Octagonal Pattern
Octagonal Pattern
Exposure Energy :
1000mJ/cm2
Focus : -5.0um
50um Octagonal Pattern 40um Octagonal Pattern 35um Octagonal Pattern 30um Octagonal Pattern
25um Octagonal Pattern 20um Octagonal Pattern 15um Octagonal Pattern 10um Octagonal Pattern

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Product name
Posi-PR (NPIH-series)
Characteristics
A product with high limiting resolution, excellent chemical resistance, plating resistance, and process margin
Patterned on Cu wafer Plated on
Cu wafer
After PR Strip

Developer for Photoresist

Product name
CPD-series
Characteristics
A high-purity product that enables the creation of micro patterns in a semiconductor through the development process following a cutting-edge micro semiconductor lithography process

Cu Electroplating

Product name
Damascene-series
Characteristics
Applicable to plating equipment (Lam, applied materials, TEL, Ebara)

PR Stripper

Peoduct Name
BMS-series
Characteristics
Photoresist & negative aqueous stripper with broad process margin, eco-friendly material, and zero metal damage
BMS-series Image
Mask 300sec(PR Residue) 350sec(PR Residue) 450sec(No PR Residue) 550sec 1800sec 3600sec
BMS-
850W

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Metal Etchant

Peoduct Name
BCE, BTE, GME-Series
Characteristics
Excellent control of etching time and amount, excellent process margin

Cu Etchant : BCE-Series

BCE-131B BCE-131C BCE-131H
EPD Over time (50 %) EPD Over time (50 %) EPD Over time (50 %)
SEM
Image
E/Time (sec) 100 150 70 105 25 38
Under cut (㎛) 0.3 0.5 0.3 0.47 0.3 0.5
Etch Rate (Å/sec) 30.0 (@ 23℃) 42.9 (@ 23℃) 120.0 (@ 23℃)

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nepes corp.

Address105, Geumil-ro 965beon-gil Samseong-myeon, Eumseong-gun, Chungcheongbuk-do

Tel+82-43-879-8911

E-mailsalesem@nepes.co.kr