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Negative Thick photoresist for Wafer Level Package - RDL, CPB

• Cu RDL (Redistribution Layer)

  PR pattern

  

  Cu RDL

  

• CPB (Cu Pillar Bump)

  PR pattern

  

  CPB

  

• Securing polymer and formulation design technology
• Excellent pattern profile (no footing, no under-cut)
• Excellent process margin
• Fast processing
• High resolution
• High plating resistance

Positive Thick photoresist for TSV, CPB

• TSV (Trough Silicon Via)

  PR pattern

  

  Plating

  

• CPB (Cu Pillar Bump)

  PR pattern

  

  Plating

  

• Tall Pillar

  PR pattern

  

• Our own polymer design and optimized Formulation
• Excellent pattern profile (no footing, no under-cut)
• Excellent strip ability (no residue)
• High resolution / aspect ratio
• Wide process margin
• Excellent chemical & plating resistance

Photo-definable dielectric for advanced package

• NDP-Series used as various protection/insulation layers in the bumping process
• Soluble Polyimide backbone: Ultra-low-temperature cure, ultra-low shrinkage

• It is possible to remove the thick photoresist without metal damage and residue
• An aqueous or organic type stripper can be selected according to the photo process conditions
• Low Metal Damage (Cu, Ni, Sn, Ag, Al)
• Strip performnce can be controlled according to the type of PR and thickness.